Chengzhan, Li: search on Z-Library

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1

[IEEE 2019 IEEE International Conference on Mechatronics and Automation (ICMA) - Tianjin, China (2019.8.4-2019.8.7)] 2019 IEEE International Conference on Mechatronics and Automation (ICMA) - Dynamic Behavior of the Discharge Valve in A Moving Coil Oil-free Linear Compressor for Refrigeration Cycle

Li, Chengzhan, Cai, Jinghui

Year:

2019

Language:

english

File:

PDF, 8.96 MB

english, 2019

2

Structure optimization of field-plate AlGaN/GaN HEMTs

Weijun Luo, Ke Wei, Xiaojuan Chen, Chengzhan Li, Xinyu Liu, Xiaoliang Wang

Journal:

Microelectronics Journal

Year:

2007

Language:

english

File:

PDF, 113 KB

english, 2007

3

A Multiple-Ring-Modulated JTE Technique for 4H-SiC Power Device With Improved JTE-Dose Window

Deng, Xiaochuan, Li, Lijun, Wu, Jia, Li, Chengzhan, Chen, Wanjun, Li, Juntao, Li, Zhaoji, Zhang, Bo

Journal:

IEEE Transactions on Electron Devices

Year:

2017

Language:

english

File:

PDF, 2.13 MB

english, 2017

4

A robust and area-efficient guard ring edge termination technique for 4H-SiC power MOSFETs

Deng, Xiaochuan, Guo, Yuanxu, Dai, Tianxiang, Li, Chengzhan, Chen, Ximing, Chen, Wanjun, Zhang, Yourun, Zhang, Bo

Journal:

Materials Science in Semiconductor Processing

Year:

2017

Language:

english

File:

PDF, 2.25 MB

english, 2017

5

Effects of the driving voltage waveform on the performance of vapor compression cycle system driven by the moving coil oil-free linear compressor

Li, Chengzhan, Li, Jianguo, Tang, Lifei, Sun, Jian, Zou, Huiming, Cai, Jinghui

Journal:

International Journal of Refrigeration

Year:

2019

Language:

english

File:

PDF, 2.69 MB

english, 2019

6

Impact of Varied Buffer Layer Designs on Single-Event Response of 1.2-kV SiC Power MOSFETs

Lu, Jiang, Liu, Jiawei, Tian, Xiaoli, Chen, Hong, Tang, Yidan, Bai, Yun, Li, Chengzhan, Liu, Xinyu

Journal:

IEEE Transactions on Electron Devices

Year:

2020

File:

PDF, 6.51 MB

2020

7

Experimental and Theoretical Investigation of Nonlinear Dynamic characteristics in an Oil-free Moving Coil Linear Compressor

Sun, Jian, Li, Chengzhan, Li, Jianguo, Cai, Jinghui

Journal:

IOP Conference Series Materials Science and Engineering

Year:

2020

File:

PDF, 1.33 MB

2020

8

[IEEE 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Xi'an, China (2019.6.12-2019.6.14)] 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Investigation on the Modeling of 3300 V SiC MOSFET

Han, Zhonglin, Chen, Hong, Chen, Ximing, Zhao, Yanli, Li, Chengzhan, Yun, Bai

Year:

2019

Language:

english

File:

PDF, 264 KB

english, 2019

9

[IEEE 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Xi'an, China (2019.6.12-2019.6.14)] 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Investigation on Short Circuit Test of 3300V SiC MOSFET

Chen, Hong, Chen, Ximing, Han, Zhonglin, Zhao, Yanli, Bai, Yun, Li, Chengzhan, Han, Zhengsheng

Year:

2019

Language:

english

File:

PDF, 201 KB

english, 2019

10

[IEEE 2019 IEEE International Conference on Mechatronics and Automation (ICMA) - Tianjin, China (2019.8.4-2019.8.7)] 2019 IEEE International Conference on Mechatronics and Automation (ICMA) - Dynamic Behavior of the Discharge Valve in A Moving Coil Oil-free Linear Compressor for Refrigeration Cycle

Li, Chengzhan, Cai, Jinghui

Year:

2019

File:

PDF, 8.96 MB

2019

11

Development of High Power SiC Devices for Rail Traction Power Systems

Liu, Guoyou, Wu, Yibo, Li, Kongjing, Wang, Yangang, Li, ChengZhan

Journal:

Journal of Crystal Growth

Year:

2018

Language:

english

File:

PDF, 1.40 MB

english, 2018

12

[IEEE 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT) - Guilin, China (2014.10.28-2014.10.31)] 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Design and optimization of Field Limiting Rings termination for 1200V 4H-SiC VDMOSFETs

Huo, Ruibin, Shen, Huajun, Bai, Yun, Zhang, Xufang, Li, Chengzhan

Year:

2014

Language:

english

File:

PDF, 803 KB

english, 2014

13

[IEEE 2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) - Shenzhen, China (2019.11.25-2019.11.27)] 2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) - Electro-thermal Analysis of 1.2kV-100A SiC JBS Diodes Under Surge Current Stress

Zhong, Wei, Tang, Yidan, Li, Chengzhan, Chen, Hong, Zhang, Yourun, Bai, Yun, Liu, Xinyu

Year:

2019

Language:

english

File:

PDF, 1.18 MB

english, 2019

14

Investigation of Leakage Current Mechanisms in La2O3/SiO2/4H-SiC MOS Capacitors with Varied SiO2Thickness

Wang, Yucheng, Jia, Renxu, Zhao, Yanli, Li, Chengzhan, Zhang, Yuming

Journal:

Journal of Electronic Materials

Year:

2016

Language:

english

File:

PDF, 649 KB

english, 2016

15

A Brief Review of Dilution Refrigerator Development for Space Applications

Zheng, Maowen, Quan, Jia, Wang, Nailiang, Li, Chengzhan, Zhao, Miguang, Wei, Lingjiao, Liang, Jingtao

Journal:

Journal of Low Temperature Physics

Year:

2019

Language:

english

File:

PDF, 1.33 MB

english, 2019

16

High performance 1 mm AlGaN/GaN HEMT based on SiC substrate

Weijun Luo, Xiaojuan Chen, Chengzhan Li, Xinyu Liu, Zhijing He, Ke Wei, Xiaoxin Liang, Xiaoliang Wang

Journal:

Frontiers of Electrical and Electronic Engineering

Year:

2008

Language:

english

File:

PDF, 103 KB

english, 2008

17

Degradation in electrothermal characteristics of 4H-SiC junction barrier Schottky diodes under high temperature power cycling stress

Tang, Yidan, Ge, Lan, Gu, Hang, Bai, Yun, Luo, Yafei, Li, Chengzhan, Liu, Xinyu

Journal:

Microelectronics Reliability

Year:

2019

Language:

english

File:

PDF, 2.35 MB

english, 2019

18

DNA-based label-free electrochemical biosensors: from principles to applications

Hai, Xin, Li, Yuanfang, Zhu, Chengzhan, Song, Weiling, Cao, Jingyu, Bi, Sai

Journal:

TrAC Trends in Analytical Chemistry

Year:

2020

File:

PDF, 3.84 MB

2020

19

Assembly and spontaneous resolution of the chiral inorganic polyoxometalates-based frameworks via helical chains association

Tang, Qun, Liu, Shuxia, Liu, Yiwei, Li, Shujun, Ma, Fengji, Li, Jianxin, Wang, Shengtian, Liu, Chengzhan

Journal:

Dalton Transactions

Year:

2013

Language:

english

File:

PDF, 1.50 MB

english, 2013

20

Ordered hexagonal mesoporous aluminosilicates synthesized using zeolite as precursor and the wall-thickness tuned by pH control

Chunlei Wang, Guangshang Zhu, Tiecun Shang, Xiaohui Cai, Chengzhan Liu, Nan Li, Yuhong Wei, Jian Li, Weiwei Zhang, Shilun Qiu

Journal:

Solid State Communications

Year:

2005

Language:

english

File:

PDF, 158 KB

english, 2005

21

Characterization of the effects of nitrogen and hydrogen passivation on SiO 2 /4H-SiC interface by low temperature conductance measurements

Wang, Yiyu, Peng, Zhaoyang, Shen, Huajun, Li, Chengzhan, Wu, Jia, Tang, Yachao, Zhao, Yanli, Chen, Ximing, Liu, Kean, Liu, Xinyu

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 1.36 MB

english, 2016

22

Annealing before gate metal deposition related noise performance in AlGaN/GaN HEMTs

Lei, Pang, Yan, Pu, Xinyu, Liu, Liang, Wang, Chengzhan, Li, Jian, Liu, Yingkui, Zheng, Ke, Wei

Journal:

Journal of Semiconductors

Year:

2009

Language:

english

File:

PDF, 1.46 MB

english, 2009

23

[IEEE 2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) - Beijing, China (2016.11.15-2016.11.17)] 2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) - R&D of 1200V SiC MOSFETs with nitrided gate oxide and self-aligned channel technology

Peng, Zhaoyang, Shen, Huajun, Chen, Hong, Bai, Yun, Tang, Yidan, Wang, Yiyu, Chen, Ximing, Li, Chengzhan, Liu, Kean, Liu, Xinyu

Year:

2016

Language:

english

File:

PDF, 2.17 MB

english, 2016

24

Improvements to the extraction of an AlGaN/GaN HEMT small-signal model

Yan, Pu, Lei, Pang, Liang, Wang, Xiaojuan, Chen, Chengzhan, Li, Xinyu, Liu

Journal:

Journal of Semiconductors

Year:

2009

Language:

english

File:

PDF, 1.79 MB

english, 2009

25

Design, fabrication and characterization of mesa combined with JTE termination for high-voltage 4H–SiC PiN diodes

Deng, Xiaochuan, Xiao, Han, Wu, Jia, Shen, Huajun, Li, Chengzhan, Tang, Yachao, Zhang, Yourun, Zhang, Bo

Journal:

Superlattices and Microstructures

Year:

2015

Language:

english

File:

PDF, 1.02 MB

english, 2015

26

Characteristics and analysis of 4H-SiC PiN diodes with a carbon-implanted drift layer

Feng, Jiangmei, Shen, Huajun, Ma, Xiaohua, Bai, Yun, Wu, Jia, Li, Chengzhan, Liu, Kean, Liu, Xinyu

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 418 KB

english, 2016

27

[IEEE 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Hangzhou, China (2016.10.25-2016.10.28)] 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Static and dynamic study in high-voltage 4H-SiC PiN rectifiers

Deng, Xiaochuan, Xixi Chen,, Xuan Li,, Chengzhan Li,, Jia Wu,, Yourun Zhang,

Year:

2016

Language:

english

File:

PDF, 891 KB

english, 2016

28

[IEEE 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings - Shanghai, China (2006.10.23-2006.10.26)] 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings - Structure Optimization of Field-Plate AlGaN/GaN HEMTs

Weijun, Luo, Ke, Wei, Xiaojuan, Chen, Chengzhan, Li, Xinyu, Liu, Xiaoliang, Wang

Year:

2006

Language:

english

File:

PDF, 85 KB

english, 2006

29

An on-chip temperature compensation circuit for an InGaP/GaAs HBT RF power amplifier

Li, Chengzhan, Chen, Zhijian, Huang, Jiwei, Wang, Yongping, Ma, Chuanhui, Yang, Hanbing, Liao, Yinghao, Zhou, Yong, Liu, Bin

Journal:

Journal of Semiconductors

Year:

2011

Language:

english

File:

PDF, 659 KB

english, 2011

30

MildâTemperature SolutionâAssisted Encapsulation of Phosphorus into ZIFâ8 Derived Porous Carbon as LithiumâIon Battery Anode

Yan, Chengzhan, Zhao, Huaping, Li, Jun, Jin, Huile, Liu, Long, Wu, Wanyi, Wang, Jichang, Lei, Yong, Wang, Shun

Journal:

Year:

2020

Language:

english

File:

PDF, 1.59 MB

english, 2020

31

pH-responsive DNA nanomicelles for chemo-gene Synergetic Therapy of Anaplastic Large Cell Lymphoma

Li, Yuwei, Yue, Shuzhen, Cao, Jingyu, Zhu, Chengzhan, Wang, Yixiu, Hai, Xin, Song, Weiling, Bi, Sai

Journal:

Year:

2020

File:

PDF, 3.33 MB

2020

32

Different JFET Designs on Conduction and Short-circuit Capability for 3.3 kV Planar-gate Silicon Carbide MOSFETs

Chen, Ximing, Li, Xuan, Wang, Yafei, Chen, Hong, Zhou, Caineng, Zhang, Chao, Li, Chengzhan, Deng, Xiaochuan, Wu, Yudong, Zhang, Bo

Journal:

IEEE Journal of the Electron Devices Society

Year:

2020

File:

PDF, 831 KB

2020

33

[IEEE 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings - Shanghai, China (2006.10.23-2006.10.26)] 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings - Effect of Passivation on Increasing of AlGaN/GaN HEMT Gate Reverse Leakage

Chengzhan, Li, Jian, Liu, Xinyu, Liu, Guoguo, Liu, Dan, Liu, Xiaojuan, Chen, Zhijing, He

Year:

2006

Language:

english

File:

PDF, 74 KB

english, 2006

34

Hybrid 3.3âkV/450âA half-bridge IGBT power module with SiC Schottky barrier diodes

Li, Daohui, Luo, Haoze, Huang, Yue, Li, Xiang, Qi, Fang, Packwood, Matthew, Luo, Haihui, Chen, Ximing, Li, Chengzhan, Wang, Yangang, Dai, Xiaoping, Liu, Guoyou

Journal:

IET Power Electronics

Year:

2020

File:

PDF, 2.21 MB

2020

35

Effect of post oxidation annealing in nitric oxide on interface properties of 4H-SiC/SiO 2 after high temperature oxidation

Li, Yanyue, Deng, Xiaochuan, Liu, Yunfeng, Zhao, Yanli, Li, Chengzhan, Chen, Xixi, Zhang, Bo

Journal:

Journal of Semiconductors

Year:

2015

Language:

english

File:

PDF, 1.01 MB

english, 2015

36

Effects of combined NO and forming gas annealing on interfacial properties and oxide reliability of 4H-SiC MOS structures

Peng, Zhaoyang, Wang, Yiyu, Shen, Huajun, Li, Chengzhan, Wu, Jia, Bai, Yun, Liu, Kean, Liu, Xinyu

Journal:

Microelectronics Reliability

Year:

2015

Language:

english

File:

PDF, 1.16 MB

english, 2015

37

Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal–oxide–semiconductor devices

Jia, Yifan, Lv, Hongliang, Niu, Yingxi, Li, Ling, Song, Qingwen, Tang, Xiaoyan, Li, Chengzhan, Zhao, Yanli, Xiao, Li, Wang, Liangyong, Tang, Guangming, Zhang, Yimen, Zhang, Yuming

Journal:

Chinese Physics B

Year:

2016

Language:

english

File:

PDF, 846 KB

english, 2016

38

Impact of UV/ozone surface treatment on AlGaN/GaN HEMTs

Tingting, Yuan, Xinyu, Liu, Yingkui, Zheng, Chengzhan, Li, Ke, Wei, Guoguo, Liu

Journal:

Journal of Semiconductors

Year:

2009

Language:

english

File:

PDF, 2.30 MB

english, 2009

39

Manipulation on ZnO heterostructures: from binary ZnO–Ag to ternary ZnO–Ag–polypyrrole

Li, Juan, Yan, Jian, Liu, Chengzhan, Dong, Lihong, Lv, Hui, Sun, Wendong, Xing, Shuangxi

Journal:

Year:

2014

Language:

english

File:

PDF, 9.60 MB

english, 2014

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